The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Jun. 28, 2012
Applicants:

Stephen Forrest, Ann Arbor, MI (US);

Jeramy D. Zimmerman, Ann Arbor, MI (US);

Xin Xu, West Windsor, NJ (US);

Christopher Kyle Renshaw, Ann Arbor, MI (US);

Inventors:

Stephen Forrest, Ann Arbor, MI (US);

Jeramy D. Zimmerman, Ann Arbor, MI (US);

Xin Xu, West Windsor, NJ (US);

Christopher Kyle Renshaw, Ann Arbor, MI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); H01L 31/0392 (2006.01); H01L 31/075 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1892 (2013.01); H01L 27/1446 (2013.01); H01L 31/03926 (2013.01); H01L 31/075 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01);
Abstract

A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration.


Find Patent Forward Citations

Loading…