The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

May. 30, 2012
Applicants:

Satoshi Oomae, Omihachiman, JP;

Keita Kurosu, Omihachiman, JP;

Inventors:

Satoshi Oomae, Omihachiman, JP;

Keita Kurosu, Omihachiman, JP;

Assignee:

KYOCERA Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0749 (2012.01); H01L 31/0352 (2006.01); H01L 31/032 (2006.01); H01L 31/036 (2006.01); H01L 31/0465 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); H01L 31/0322 (2013.01); Y02E 10/541 (2013.01); H01L 31/0749 (2013.01); H01L 31/036 (2013.01); H01L 31/0465 (2014.12);
Abstract

A photoelectric conversion device includes a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; and a semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element. The photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface.


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