The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Aug. 14, 2014
Brett Z Nosho, Santa Monica, CA (US);
Rajesh D Rajavel, Oak Park, CA (US);
Hasan Sharifi, Agoura Hills, CA (US);
Sevag Terterian, Van Nuys, CA (US);
Brett Z Nosho, Santa Monica, CA (US);
Rajesh D Rajavel, Oak Park, CA (US);
Hasan Sharifi, Agoura Hills, CA (US);
Sevag Terterian, Van Nuys, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.