The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Aug. 28, 2013
Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, Kyoto-fu, JP;
Kazutaka Nakamura, Nagaokakyo, JP;
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Abstract
An ultraviolet sensor having a p-type semiconductor layer containing, as its main constituent, a solid solution of NiO and ZnO, and an n-type semiconductor layer containing ZnO as its main constituent, which is joined to the p-type semiconductor layer such that a portion of the p-type semiconductor layer is exposed. An internal electrode is buried in the p-type semiconductor layer and opposed to the n-type semiconductor layer. Both ends of the internal electrode are exposed at both end surfaces of the p-type semiconductor layer, and first and second high-resistance layers composed of insulating materials cover one end of the internal electrode. The second high-resistance layer is obtained by diffusion of the insulating material from the first high-resistance layer into the p-type semiconductor layer. A first external electrode is connected to the other end of the internal electrode, and a second external electrode is connected to the n-type semiconductor layer.