The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jan. 14, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Heedon Hwang, Yongin-si, KR;
Ji-Young Min, Seoul, KR;
Jongchul Park, Hwaseong-si, KR;
Insang Jeon, Hwasung-si, KR;
Woogwan Shim, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 29/78 (2006.01); H01L 27/108 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/10876 (2013.01); H01L 27/228 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 27/2436 (2013.01); H01L 29/66666 (2013.01);
Abstract
Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.