The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Dec. 18, 2012
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Tae Kyung Oh, Yongin, KR;
Min Soo Yoo, Yongin, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); G11C 11/4091 (2006.01); H01L 29/94 (2006.01); H01L 29/423 (2006.01); G11C 11/404 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/66666 (2013.01); G11C 11/4091 (2013.01); G11C 11/404 (2013.01); G11C 2211/4068 (2013.01); H01L 29/945 (2013.01); H01L 29/4236 (2013.01);
Abstract
A semiconductor device includes junction regions formed in upper portions of both sidewalls of a trench formed in a semiconductor substrate, a first gate electrode buried in the trench and having a stepped upper surface, and a second gate electrode formed on the first gate electrode to overlap a junction region.
Oh, Tae. (2015). Semiconductor device having buried gate, method of fabricating the same, and module and system having the same (U.S. Patent No. 9064956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9064956
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile