The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Nov. 21, 2011
Applicants:
Jakob Kriz, Weinboehla, DE;
Norbert Urbansky, Dresden, DE;
Inventors:
Jakob Kriz, Weinboehla, DE;
Norbert Urbansky, Dresden, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53223 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/76864 (2013.01); H01L 21/76873 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53295 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/00014 (2013.01);
Abstract
Embodiments relate to a method for making a semiconductor structure, the method comprising: forming a seed layer in direct contact with a dielectric material; forming a masking layer over the seed layer; patterning the masking layer to expose the seed layer; forming a fill layer over the exposed seed layer; and causing the seed layer to react with the dielectric layer to form a barrier layer between the fill layer and the dielectric layer.