The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Jun. 30, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki, JP;

Inventors:

Junji Noguchi, Palo Alto, CA (US);

Takayuki Oshima, Ome, JP;

Noriko Miura, Itami, JP;

Kensuke Ishikawa, Ome, JP;

Tomio Iwasaki, Tsukuba, JP;

Kiyomi Katsuyama, Iruma, JP;

Tatsuyuki Saito, Ome, JP;

Tsuyoshi Tamaru, Hachioji, JP;

Hizuru Yamaguchi, Akisima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 21/314 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/314 (2013.01); H01L 21/76801 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76814 (2013.01); H01L 21/76822 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76838 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/76883 (2013.01); H01L 23/53228 (2013.01); H01L 23/528 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.


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