The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9064842 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 23, 2015

Filed:

Mar. 20, 2012
Applicants:

Ageeth Anke Bol, Yorktown Heights, NY (US);

Aaron Daniel Franklin, Croton on Hudson, NY (US);

Shu-jen Han, Cortlandt Manor, NY (US);

Inventors:

Ageeth Anke Bol, Yorktown Heights, NY (US);

Aaron Daniel Franklin, Croton on Hudson, NY (US);

Shu-Jen Han, Cortlandt Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/335 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); C01B 31/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 21/02527 (2013.01); C01B 31/0469 (2013.01); Y10S 977/734 (2013.01); H01L 29/778 (2013.01); H01L 29/1606 (2013.01);
Abstract

A semiconductor device includes a substrate, first plural contacts formed in the substrate, a graphene layer formed on the substrate and on the first plural contacts and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts.


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