The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Oct. 24, 2012
Applicant:
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Inventors:
Chiara Sabbione, Grenoble, FR;
Lea Di Cioccio, Saint Ismier, FR;
Jean-Pierre Nieto, La Rochette, FR;
Laurent Vandroux, Le Cheylas, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/76251 (2013.01); H01L 21/02126 (2013.01); H01L 21/02274 (2013.01); H01L 21/3105 (2013.01); H01L 21/02164 (2013.01); H01L 21/02304 (2013.01); H01L 21/02359 (2013.01); H01L 21/31051 (2013.01);
Abstract
A direct bonding method between at least a first layer () comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer () of material having hydrophilicity, comprising at least the steps of: