The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Apr. 23, 2014
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Jung Ah Lim, Gyeonggi-do, KR;

Yong-Won Song, Daejeon, KR;

Jae-Min Hong, Seoul, KR;

Won-Kook Choi, Seoul, KR;

Dae Seong Eom, Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/45 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/66969 (2013.01); H01L 21/02527 (2013.01); H01L 21/02227 (2013.01); H01L 29/4908 (2013.01); H01L 29/43 (2013.01); H01L 29/458 (2013.01);
Abstract

A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern.


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