The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Nov. 11, 2013
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Hyun-Young Kim, Yongin, KR;

Sung-In Ro, Yongin, KR;

Cheoll-Hee Jeon, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01); G02F 1/13458 (2013.01); G02F 1/136227 (2013.01); G02F 2001/136236 (2013.01); H01L 21/28008 (2013.01); H01L 21/283 (2013.01); H01L 21/4885 (2013.01);
Abstract

A thin film transistor array panel includes: a substrate including a display area and a drive region in which a driving chip for transmitting a driving signal to the pixels is located; a gate line in the display area; a storage electrode line; a gate driving pad coupled to the driving chip; a gate insulating layer; a first semiconductor layer on the gate insulating layer and overlapped with a gate electrode protruding from the gate line; a second semiconductor layer formed on the gate insulating layer and overlapped with a sustain electrode protruding from the storage electrode line; a data line crossing the gate line in an insulated manner and a drain electrode separated from the data line; and a pixel electrode coupled to the drain electrode, and the drain electrode comprises a drain bar facing the source electrode, and a drain extender overlapped with the second semiconductor layer.


Find Patent Forward Citations

Kim, Hyun-Young. (2015). Thin film transistor array panel and manufacturing method thereof (U.S. Patent No. 9064756). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9064756

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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