The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Dec. 23, 2011
Applicants:
Dayne D. Fanfair, Austin, TX (US);
Brian A. Korgel, Round Rock, TX (US);
Inventors:
Dayne D. Fanfair, Austin, TX (US);
Brian A. Korgel, Round Rock, TX (US);
Assignee:
Merck Patent GmbH, Darmstadt, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0256 (2013.01); H01L 21/02521 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02551 (2013.01); H01L 21/02562 (2013.01); H01L 21/02581 (2013.01); H01L 21/02628 (2013.01); H01L 21/02645 (2013.01);
Abstract
Methods synthesizing nanowires in solution at low temperatures (e.g., about 400° C. or lower) are provided. In the present methods, the nanowires are synthesized by exposing nanowire precursors to metal nanocrystals in a nanowire growth solution comprising a solvent. The metal nanocrystals serve as seed particles that catalyze the growth of the semiconductor nanowires. The metal nanocrystals may be formed in situ in the growth solution from metal nanocrystal precursors. Alternatively, the nanowires may be pre-formed and added to the growth solution.