The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

May. 09, 2012
Applicants:

Kaichiu Wong, Mountain View, CA (US);

Erik Sean Smith, Los Gatos, CA (US);

Christ Willie Ford, San Jose, CA (US);

Inventors:

Kaichiu Wong, Mountain View, CA (US);

Erik Sean Smith, Los Gatos, CA (US);

Christ Willie Ford, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01); C23C 16/30 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02557 (2013.01); H01L 31/0322 (2013.01); H01L 31/0326 (2013.01); H01L 21/0256 (2013.01); H01L 21/02568 (2013.01); H01L 21/02667 (2013.01); C23C 16/306 (2013.01); C23C 16/56 (2013.01); Y02E 10/541 (2013.01);
Abstract

In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, and annealing the precursor layer in the presence of a gaseous phase comprising volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, where the presence of the gaseous phase reduces decomposition of volatile species from the precursor layer during annealing.


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