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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9064697 B1

PDFFull Text
Date of Patent:
Jun. 23, 2015

Filed:

Aug. 28, 2013

Trap rich layer formation techniques for semiconductor devices

Applicant:

Silanna Semiconductor U.s.a., Inc., San Diego, CA (US);

Inventors:

Anton Arriagada, San Diego, CA (US);

Michael A. Stuber, Carlsbad, CA (US);

Stuart B. Molin, Carlsbad, CA (US);

Assignee:

Silanna Semiconductor U.S.A., Inc., San Diego, CA (US);

Attorney:

The Mueller Law Office, P.C.

Primary Examiner:

Samuel Gebremariam

Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02365 (2013.01); H01L 21/2007 (2013.01); H01L 21/84 (2013.01); H01L 29/7803 (2013.01); H01L 27/1203 (2013.01);
Abstract

A trap rich layer for an integrated circuit chip is formed by chemical etching and/or laser texturing of a surface of a semiconductor layer. In some embodiments, a trap rich layer is formed by a technique selected from the group of techniques consisting of laser texturing, chemical etch, irradiation, nanocavity formation, porous Si-etch, semi-insulating polysilicon, thermal stress relief and mechanical texturing. Additionally, combinations of two or more of these techniques may be used to form a trap rich layer.

Find Patent Forward Citations

Arriagada, Anton. (2015). Trap rich layer formation techniques for semiconductor devices (U.S. Patent No. 9064697). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9064697

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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