Apparatus for manufacturing compound semiconductor, method for manufacturing compound semiconductor, and compound semiconductor

Abstract

Provided is an apparatus for manufacturing a compound semiconductor, which forms a compound semiconductor layer using a metal-organic chemical vapor deposition method. The apparatus is characterized in that: the apparatus is provided with a reaction container, a holder, which is disposed in the reaction container and has placed thereon a subject, on which the layer is to be formed, the subject having facing up the subject surface where the layer is to be formed, and a raw material supply port, through which the raw material gas of the compound semiconductor is supplied to the inside of the reaction container from the outside; the holder is in contact with the lower surface of the subject, the contact being inside of the outer circumferential portion of the subject to the center of the upper surface of the holder; and that the holder has a supporting portion, which supports the subject such that a predetermined interval is maintained between the upper surface of the holder and the lower surface of the subject. In the manufacture of the compound semiconductor using the MOCVD method, temperature distribution on the substrate surface to be deposited with a compound semiconductor crystal, and deviation of in-plane averaged light emission wavelength from a target value are suppressed using the apparatus.