The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Feb. 20, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Il-hwan Kim, Seoul, KR;
Do-yoon Kim, Hwaseong-si, KR;
Yong-chul Kim, Seoul, KR;
Shang-hyeun Park, Yongin-si, KR;
Tae-won Jeong, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 35/06 (2006.01); H05G 1/52 (2006.01); H01J 29/02 (2006.01); H01J 35/04 (2006.01); H01J 3/02 (2006.01);
U.S. Cl.
CPC ...
H01J 29/025 (2013.01); H01J 35/045 (2013.01); H01J 3/021 (2013.01); H01J 2203/0216 (2013.01); H01J 2203/0236 (2013.01); H01J 2203/0244 (2013.01); H01J 2203/0272 (2013.01); H01J 35/065 (2013.01); H01J 2235/068 (2013.01);
Abstract
An electron emission device includes a cathode electrode; a mesh-shaped gate electrode spaced apart from the cathode electrode; a plurality of gate spacers between the cathode electrode and the gate electrode; and a plurality of electron emission sources between the cathode electrode and the gate electrode, and alternating with the plurality of gate spacers.