The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Nov. 14, 2014
Applicants:

Thomas M. Crawford, Irmo, SC (US);

Samir Y. Garzon, San Jose, CA (US);

Inventors:

Thomas M. Crawford, Irmo, SC (US);

Samir Y. Garzon, San Jose, CA (US);

Assignee:

University of South Carolina, Columbia, SC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 15/06 (2006.01); G01N 33/00 (2006.01); G01N 33/48 (2006.01); G01N 27/04 (2006.01); G01N 27/12 (2006.01); G01N 27/26 (2006.01); G01R 33/09 (2006.01); G01R 33/12 (2006.01);
U.S. Cl.
CPC ...
G01N 27/04 (2013.01); Y10T 436/24 (2015.01); Y10T 436/11 (2015.01); G01N 27/12 (2013.01); G01N 27/26 (2013.01); G01R 33/093 (2013.01); G01R 33/1284 (2013.01);
Abstract

In general, the present disclosure is directed toward a novel hybrid spintronic device for converting chemical absorption into a change in magnetoresistance. This device uses a novel magnetic material which depends on the attachment of an organic structure to a metallic film for its magnetism. Changes in the chemical environment lead to absorption on the surface of this organometallic bilayer and thus modify its magnetic properties. The change in magnetic properties, in turn, leads to a change in the resistance of a magnetoresistive structure or a spin transistor structure, allowing a standard electrical detection of the chemical change in the sensor surface.


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