The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Apr. 02, 2011
Applicants:

Lei Jiang, Beijing, CN;

Bin Su, Beijing, CN;

Shutao Wang, Beijing, CN;

Jie MA, Beijing, CN;

Yanlin Song, Beijing, CN;

Inventors:

Lei Jiang, Beijing, CN;

Bin Su, Beijing, CN;

Shutao Wang, Beijing, CN;

Jie Ma, Beijing, CN;

Yanlin Song, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); B81C 1/00 (2006.01); H01L 29/12 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/41 (2006.01); B05D 1/18 (2006.01); C23C 18/04 (2006.01); C23C 18/18 (2006.01); B05D 1/02 (2006.01); C23C 18/31 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
B81C 1/00341 (2013.01); B05D 1/18 (2013.01); B05D 5/12 (2013.01); C23C 18/04 (2013.01); C23C 18/18 (2013.01); B05D 1/02 (2013.01); C23C 18/31 (2013.01); H01L 29/125 (2013.01); B82Y 30/00 (2013.01); B82Y 10/00 (2013.01); B81C 1/00206 (2013.01); B81B 2203/0361 (2013.01); B82Y 40/00 (2013.01); H01L 29/41725 (2013.01); H01L 29/66439 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/16 (2013.01); H01L 29/413 (2013.01);
Abstract

Provided is a method of forming large-area directionally aligned nanowires on a silicon wafer surface with hydrophobic silicon pillars so as to form microelectrode-pair arrays, which belongs to the field of electronic circuit. The method includes grafting fluoroalkylsilane on the surface of a silicon wafer with hydrophilic silicon pillar arrays; increasing the contact angle between the surface of the hydrophilic silicon pillar arrays and water from 10° to 150° above and obtaining the silicon wafer with hydrophobic silicon pillar arrays; driving water solution containing materials used for forming nanowires to flow across the surface with the hydrophobic silicon pillar arrays uniformly, so that directionally aligned nanowires are formed on the tops of each two adjacent silicon pillars in the hydrophobic silicon pillar arrays; each of the nanowires connects the two adjacent silicon pillars together so as to form a microelectrode-pair, and a plurality of microelectrode-pairs constitute the microelectrode-pair arrays.


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