The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2015

Filed:

Feb. 15, 2011
Applicant:

Yasuhiro Hosogi, Toyama, JP;

Inventor:

Yasuhiro Hosogi, Toyama, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 35/00 (2006.01); B01J 23/888 (2006.01); B01J 37/06 (2006.01); B01J 35/10 (2006.01); B01D 53/86 (2006.01);
U.S. Cl.
CPC ...
B01J 35/004 (2013.01); B01J 23/888 (2013.01); B01J 37/06 (2013.01); B01J 35/1009 (2013.01); B01D 53/8668 (2013.01); B01D 2255/20761 (2013.01); B01D 2255/20776 (2013.01); B01D 2255/802 (2013.01);
Abstract

The present invention relates to a copper ion-modified tungsten oxide photocatalyst subjected to chemical etching treatment with a basic aqueous solution in which a rate of change in diffuse reflectance of the photocatalyst as measured at a wavelength of 700 nm between before and after irradiated with an ultraviolet light in atmospheric air is less than 10%; and a process for producing a copper ion-modified tungsten oxide photocatalyst which includes a copper ion modifying step of modifying a tungsten oxide powder with a copper ion; a chemical etching step of subjecting the tungsten oxide powder to chemical etching treatment with a basic aqueous solution, the chemical etching treatment being carried out either before or after the copper ion modifying step; and a drying step of drying the product obtained after the above steps at a temperature of 200° C. or lower.


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