The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Feb. 09, 2012
Applicant:

Matthew J. Breitwisch, Yorktown Heights, NY (US);

Inventor:

Matthew J. Breitwisch, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/16 (2013.01); H01L 27/2436 (2013.01);
Abstract

A method of fabricating a lower bottom electrode for a memory element and a semiconductor structure having the same includes forming a dielectric layer over a semiconductor substrate having a plurality of conductive contacts formed therein to be connected to access circuitry, forming a dielectric cap layer over exposed portions of the dielectric layer and the conductive contacts, depositing a planarizing material over the dielectric cap layer, etching a via to an upper surface of each conductive contact, removing the planarizing material, depositing electrode material over the dielectric cap layer and within the vias, the electrode material contacting an upper surface of each conductive contact, and planarizing the electrode material to form a lower bottom electrode over each conductive contact.


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