The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Nov. 02, 2011
Applicants:

G. Jeffrey Snyder, Pasadena, CA (US);

Yanzhong Pei, Alhambra, CA (US);

Inventors:

G. Jeffrey Snyder, Pasadena, CA (US);

Yanzhong Pei, Alhambra, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/06 (2006.01); H01B 1/10 (2006.01); H01L 35/16 (2006.01);
U.S. Cl.
CPC ...
H01L 35/16 (2013.01);
Abstract

The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.


Find Patent Forward Citations

Snyder, G.. (2015). High thermoelectric performance by convergence of bands in iv-vi semiconductors, heavily doped pbte, and alloys/nanocomposites (U.S. Patent No. 9059364). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9059364

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…