The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Mar. 22, 2012
Applicants:
Bin LI, Camarillo, CA (US);
Peter J. Zampardi, Jr., Newbury Park, CA (US);
Andre G. Metzger, Newbury Park, CA (US);
Inventors:
Bin Li, Camarillo, CA (US);
Peter J. Zampardi, Jr., Newbury Park, CA (US);
Andre G. Metzger, Newbury Park, CA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 29/93 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 29/94 (2006.01); H03J 3/18 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 21/8249 (2013.01); H01L 27/0605 (2013.01); H01L 27/0623 (2013.01); H01L 27/0808 (2013.01); H01L 27/0811 (2013.01); H01L 29/94 (2013.01); H03J 3/185 (2013.01);
Abstract
A varactor includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.