The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Mar. 07, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Mayumi Morizuka, Kanagawa-ken, JP;
Assignee:
Kabushika Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/2003 (2013.01);
Abstract
According to an embodiment, a nitride semiconductor Schottky diode includes a first layer including a first nitride semiconductor and a second layer provided on the first layer and including a second nitride semiconductor having a wider band gap than the first nitride semiconductor. The diode also includes an ohmic electrode provided on the second layer and a Schottky electrode provided on the second layer. The second layer includes a region containing an acceptor in the vicinity of the Schottky electrode between the Schottky electrode and the ohmic electrode.