The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 07, 2012
Hwan Kim, Daegu, KR;
Heung-lyul Cho, Gyeonggi-Do, KR;
Tae-young OH, Gyeonggi-Do, KR;
Ji-eun Jung, Seoul, KR;
Hwan Kim, Daegu, KR;
Heung-Lyul Cho, Gyeonggi-Do, KR;
Tae-Young Oh, Gyeonggi-Do, KR;
Ji-Eun Jung, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.