The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Nov. 26, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Rene Escoffier, La Buisse, FR;
Abstract
An apparatus includes a bidirectional hetero junction field-effect power transistor having a gate between conduction electrodes, semiconductor layers, one formed on the other, and the two meeting at an electron gas layer interface, and a reference electrode embedded in one layer. The reference electrode connects to a potential of a zone of the gas layer that is plumb with the reference electrode, A distance between the reference electrode and one conduction electrode and between the gate and that conduction electrode is between 45 and 55% of a distance between the conduction electrodes. A control circuit connected to the reference electrode generates a switching voltage for switching the transistor from a reference electrode voltage, and to apply a control voltage to the gate.