The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Aug. 31, 2012
Applicants:

Yoshiyuki Kondo, Yokohama, JP;

Shigeru Kawanaka, Yokohama, JP;

Inventors:

Yoshiyuki Kondo, Yokohama, JP;

Shigeru Kawanaka, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7391 (2013.01);
Abstract

In one embodiment, a semiconductor device includes a substrate including a trench, and a gate electrode disposed at a position adjacent to the trench on the substrate, the gate electrode having a first side surface located on an opposite side of the trench, and a second side surface located on the same side as the trench. The device further includes a first sidewall insulator disposed on the first side surface, and a second sidewall insulator disposed on the second side surface and a side surface of the trench. The device further includes a source region of a first conductivity type disposed in the substrate on the same side as the first sidewall insulator with respect to the first side surface, and a drain region of a second conductivity type disposed in the substrate on the same side as the second sidewall insulator with respect to the second side surface.


Find Patent Forward Citations

Loading…