The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Feb. 25, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Lyndon R. Logan, Poughkeepsie, NY (US);

Edward J. Nowak, Essex Junction, VT (US);

Robert R. Robison, Colchester, VT (US);

Jonathan K. Winslow, II, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/06 (2006.01); H01L 31/036 (2006.01); G01R 27/14 (2006.01); H01L 21/66 (2006.01); G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/58 (2013.01); G01R 27/14 (2013.01); H01L 22/34 (2013.01); G01R 19/0092 (2013.01); H01L 22/30 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A plurality of diode/resistor devices are formed within an integrated circuit structure using manufacturing equipment operatively connected to a computerized machine. Each of the diode/resistor devices comprises a diode device and a resistor device integrated into a single structure. The resistance of each of the diode/resistor devices is measured during testing of the integrated circuit structure using testing equipment operatively connected to the computerized machine. The current through each of the diode/resistor devices is also measured during testing of the integrated circuit structure using the testing equipment. Then, response curves for the resistance and the current are computed as a function of variations of characteristics of transistor devices within the integrated circuit structure and/or variations of manufacturing processes of the transistor devices within the integrated circuit structure.


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