The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jul. 23, 2012
Applicants:
Wen-ping Liang, Taoyuan, TW;
Chiang-hung Lin, Taoyuan, TW;
Kuo-hui Su, Taoyuan, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66621 (2013.01); H01L 29/78 (2013.01);
Abstract
A method for forming a semiconductor device with a vertical gate is disclosed, including providing a substrate, forming a recess in the substrate, forming a gate dielectric layer on a sidewall and a bottom of the recess, forming an adhesion layer in the recess and on the gate dielectric layer, wherein the adhesion layer is a metal silicide nitride layer, and forming a gate layer in the recess and on the adhesion layer.
Quick Actions:
Liang, Wen-Ping. (2015). Semiconductor device having vertical gates and fabrication thereof (U.S. Patent No. 9059142). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9059142
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