The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Nov. 12, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Terence B. Hook, Jericho, VT (US);

Melanie J. Sherony, Wappingers Falls, NY (US);

Christopher M. Schnabel, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/326 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H03K 3/356 (2006.01);
U.S. Cl.
CPC ...
H01L 21/326 (2013.01); H01L 21/8238 (2013.01); H01L 27/092 (2013.01); H03K 3/356104 (2013.01);
Abstract

Methods and structures for restoring an electrical parameter of a field-effect transistor in an integrated circuit deployed in an end product. A source, a drain, and a gate electrode of a field-effect transistor are coupled with ground. A restoration voltage is applied to a well beneath the field-effect transistor while the source, the drain, and the gate electrode of the field-effect transistor are coupled with ground. The well may be coupled with either a positive supply voltage or ground when a switch is in a first position during normal operation of the integrated circuit and with the restoration voltage when the switch is in a second position during a relaxation operation.


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