The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Aug. 09, 2012
Applicants:

Stephen P. Ayotte, Bristol, VT (US);

David J. Hill, Richmond, VT (US);

Glen E. Richard, Essex Junction, VT (US);

Timothy M. Sullivan, Essex Junction, VT (US);

Heather M. Truax, Burlington, VT (US);

Inventors:

Stephen P. Ayotte, Bristol, VT (US);

David J. Hill, Richmond, VT (US);

Glen E. Richard, Essex Junction, VT (US);

Timothy M. Sullivan, Essex Junction, VT (US);

Heather M. Truax, Burlington, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/469 (2006.01); H01L 21/302 (2006.01); H01L 23/31 (2006.01); H01L 21/312 (2006.01); H01L 21/3105 (2006.01); H01L 29/34 (2006.01); H01L 29/32 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/302 (2013.01); H01L 23/3171 (2013.01); H01L 21/312 (2013.01); H01L 21/31058 (2013.01); H01L 23/3178 (2013.01); H01L 29/34 (2013.01); H01L 29/32 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

Aspects of the disclosure provide a method of inhibiting crack propagation in a silicon wafer. In one embodiment, a method of repairing an imperfection on a surface of a semiconductor device is disclosed. The method includes: screening for imperfections on a surface of a silicon wafer of a semiconductor device; and in response to at least one imperfection on the surface of the silicon wafer, depositing a material on the surface of the silicon wafer.


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