The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Nov. 15, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Marc Tarabbia, Austin, TX (US);
Anurag Mittal, Saratoga Springs, NY (US);
Nader Hindawy, Wappingers Falls, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28158 (2013.01); H01L 29/7856 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods for forming a variable fin FinFET cell wherein a plurality of fins is formed above a substrate, a portion of a fin is removed, forming a fin tip, a first area of a gate oxide layer is formed above the fin tip, and a second area of the gate oxide layer is formed above at least a remaining portion of the plurality of fins, wherein the first area is thicker than the second area.