The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Apr. 21, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ju-Youn Kim, Suwon-si, KR;
Hyun-Min Choi, Anyang-si, KR;
Sung-Kee Han, Seoul, KR;
Je-Don Kim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a first gate pattern and a dummy gate pattern on a first active area and a second active area of a substrate, respectively, the first gate pattern including a first gate insulating layer and a silicon gate electrode, removing the dummy gate pattern to expose a surface of the substrate in the second active area, forming a second gate pattern including a second gate insulating layer and a metal gate electrode on the exposed surface of the substrate, the first gate insulating layer having a thickness larger than a thickness of the second gate insulating layer, and forming a gate silicide on the silicon gate electrode after forming the second gate pattern.