The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 18, 2013
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Kazuo Kokumai, Atsugi, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 23/28 (2006.01); H01L 29/02 (2006.01); H01L 31/0232 (2014.01); H01L 21/18 (2006.01); H01L 31/02 (2006.01); H01L 21/762 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 23/28 (2013.01); H01L 29/02 (2013.01); H01L 31/0232 (2013.01); H01L 21/185 (2013.01); H01L 31/02 (2013.01); H01L 21/76256 (2013.01); H01L 27/14689 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An insulating portion has a first region, a second region, and a third region in the stated order from the silicon portion side, the nitrogen concentration of the first region is lower than the nitrogen concentration of the second region and the oxygen concentration of the first region, the nitrogen concentration of the third region is lower than the nitrogen concentration of the second region and the oxygen concentration of the third region, and the thickness of the first region is larger than the thickness of the third region.