The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 09, 2011
Applicants:
Munehiro Tada, Tokyo, JP;
Makoto Miyamura, Tokyo, JP;
Hiromitsu Hada, Tokyo, JP;
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); H01L 27/10 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); G11C 13/0007 (2013.01); G11C 13/0014 (2013.01); G11C 13/003 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0073 (2013.01); H01L 27/101 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/14 (2013.01); H01L 45/146 (2013.01); H01L 27/2472 (2013.01);
Abstract
A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein