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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9059077 B1

PDFFull Text
Date of Patent:
Jun. 16, 2015

Filed:

Oct. 12, 2012

Crystal layered structure and method for manufacturing same, and semiconductor element

Applicants:

Tamura Corporation, Tokyo, JP;

Koha Co., Ltd., Tokyo, JP;

Inventors:

Kazuyuki Iizuka, Tokyo, JP;

Yoshikatsu Morishima, Tokyo, JP;

Shinkuro Sato, Tokyo, JP;

Assignees:

TAMURA CORPORATION, Tokyo, JP;

KOHA CO., LTD, Tokyo, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 33/00 (2010.01); H01L 29/20 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); C30B 25/16 (2006.01); C30B 29/40 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0242 (2013.01); H01L 21/02565 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/0066 (2013.01); H01L 33/12 (2013.01); H01L 21/02414 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/0254 (2013.01); H01L 21/02573 (2013.01); H01L 21/0262 (2013.01); C30B 25/16 (2013.01); C30B 29/403 (2013.01); C30B 25/10 (2013.01); C30B 25/183 (2013.01); H01L 21/02502 (2013.01);
Abstract

Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a GaOsubstrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a GaOsubstrate; a buffer layer comprising an AlGaInN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal on the GaOsubstrate; and a nitride semiconductor layer comprising an AlGaInN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the GaOsubstrate is no less than 1.0×10/cm.

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