The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Sep. 05, 2012
Stephen W. Bedell, Wappingers Falls, NY (US);
Cheng-wei Cheng, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Kuen-ting Shiu, White Plains, NY (US);
Norma E. Sosa Cortes, New York, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Kuen-Ting Shiu, White Plains, NY (US);
Norma E. Sosa Cortes, New York, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of removing a semiconductor device layer from a base substrate is provided that includes providing a crack propagation layer on an upper surface of a base substrate. A semiconductor device layer including at least one semiconductor device is formed on the crack propagation layer. Next, end portions of the crack propagation layer are etched to initiate a crack in the crack propagation layer. The etched crack propagation layer is then cleaved to provide a cleaved crack propagation layer portion to a surface of the semiconductor device layer and another cleaved crack propagation layer portion to the upper surface of the base substrate. The cleaved crack propagation layer portion is removed from the surface of the semiconductor device layer and the another cleaved crack propagation layer portion is removed from the upper surface of the base substrate.