The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Mar. 07, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Tetsuya Ohno, Nomi, JP;

Kunio Tsuda, Nonoichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 25/10 (2013.01);
Abstract

In one embodiment, a semiconductor device includes first and second semiconductor layers of a first conductivity type above a substrate via a first film, a first electrode above the second semiconductor layer, and a second electrode disposed on a side of the first electrode or an opposite side of the first electrode with respect to the second semiconductor layer. The device further includes a first pad layer connected to the first electrode, a second pad layer connected to the second electrode and including a first upper portion contacting the second electrode, a second upper portion disposed at a level between upper and lower portions of the substrate, and a third upper portion opposed to the lower portion of the substrate, and a third semiconductor layer of a second conductivity type between the second upper portion of the second pad layer and a lower portion of the first film.


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