The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Oct. 08, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventor:

Tomoyuki Ishizu, Kyoto, JP;

Assignee:

SOCIONEXT INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/088 (2006.01); H01L 27/11 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 29/6659 (2013.01); H01L 27/1104 (2013.01); H01L 21/823807 (2013.01); H01L 27/11 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01);
Abstract

In a semiconductor device having paired transistors, an imbalance in characteristics of the paired transistors is reduced or prevented while an increase in circuit area is reduced or prevented. First and second transistors have first and second regions having the same active region pattern, and third and fourth transistors have third and fourth regions having the same active region pattern. The active regions of the third and fourth transistors have a longer length in the channel length direction than that of the active regions of the first and second transistors. The third and fourth regions have a narrower width in the channel length direction than that of the first and second regions.


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