The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Dec. 08, 2010
Yasunori Ando, Kyoto, JP;
Eiji Takahashi, Kyoto, JP;
Masaki Fujiwara, Kyoto, JP;
NISSIN ELECTRIC CO., LTD., Kyoto, JP;
Abstract
An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (O), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.