The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Dec. 27, 2013
Applicant:

Xerox Corporation, Norwalk, CT (US);

Inventors:

Yiliang Wu, Oakville, CA;

Ping Liu, Mississauga, CA;

Anthony James Wigglesworth, Oakville, CA;

Nan-Xing Hu, Oakville, CA;

Assignee:

Xerox Corporation, Norwalk, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 3/18 (2006.01); H01L 21/02 (2006.01); H01B 3/30 (2006.01); H01B 3/42 (2006.01); H01B 3/44 (2006.01); H01L 51/05 (2006.01); H01B 3/46 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02126 (2013.01); H01B 3/306 (2013.01); H01B 3/42 (2013.01); H01B 3/447 (2013.01); H01L 51/0036 (2013.01); H01L 51/052 (2013.01); H01L 51/0545 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01B 3/46 (2013.01);
Abstract

An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.


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