The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Sep. 30, 2013
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventors:

Enjing Cai, Shanghai, CN;

Qiang Li, Shanghai, CN;

Wen Wei, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 11/417 (2006.01); G11C 11/41 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50008 (2013.01); G11C 11/417 (2013.01); G11C 2029/5004 (2013.01); G11C 2029/5006 (2013.01); G11C 11/41 (2013.01); G11C 2029/5002 (2013.01);
Abstract

The present invention provides a method of detecting the transistor mismatch in a SRAM cell. The SRAM cell comprises two pass-gate transistors and a bi-stable circuit including two pull up transistors and two pull down transistors. The method comprises: providing two measuring transistors, whose gates are connected to a second word line, sources are connected to the outputs of the bi-stable circuit respectively and drains are connected to two measuring terminals respectively; turning on the measuring transistors and turning off the pass-gate transistors; detecting the voltage-current curve of the two pull down transistors and the two pull up transistors through the measuring transistors at the measuring terminals so as to detect the transistor mismatch in the SRAM cell.


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