The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Dec. 07, 2012
Applicant:

Agency for Science, Technology and Research, Singapore, SG;

Inventors:

Yuanhong Luo, Singapore, SG;

Gerard Franck Ernult, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01F 10/3254 (2013.01); H01F 10/3263 (2013.01); H01F 10/3286 (2013.01);
Abstract

A magnetoresistive device including a fixed magnetic layer structure, a first free magnetic layer structure, and a second free magnetic layer structure, wherein the fixed magnetic layer structure is arranged in between the first free magnetic layer structure and the second free magnetic layer structure, wherein the magnetization orientation of the first free magnetic layer structure is variable in response to a first electrical signal of a first polarity and the magnetization orientation of the second free magnetic layer structure is at least substantially non-variable in response to the first electrical signal, and wherein the magnetization orientation of the second free magnetic layer structure is variable in response to a second electrical signal of a second polarity and the magnetization orientation of the first free magnetic layer structure is at least substantially non-variable in response to the second electrical signal, wherein the second polarity is opposite to the first polarity.


Find Patent Forward Citations

Luo, Yuanhong. (2015). Magnetoresistive device and a writing method for a magnetoresistive device (U.S. Patent No. 9058885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9058885

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…