The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Aug. 27, 2012
Applicants:

Kamlesh P. Nair, Florence, KY (US);

Steven D. Gray, Mequon, WI (US);

Inventors:

Kamlesh P. Nair, Florence, KY (US);

Steven D. Gray, Mequon, WI (US);

Assignee:

Ticona LLC, Florence, KY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 63/02 (2006.01); C09K 19/36 (2006.01); C08L 77/00 (2006.01); C09K 19/22 (2006.01); C09K 19/30 (2006.01); C09K 19/32 (2006.01); C09K 19/34 (2006.01); C09K 19/48 (2006.01); C08K 5/20 (2006.01); C09K 19/04 (2006.01);
U.S. Cl.
CPC ...
C09K 19/22 (2013.01); C09K 19/3086 (2013.01); C09K 19/322 (2013.01); C09K 19/3444 (2013.01); C09K 19/48 (2013.01); C08K 5/20 (2013.01); C09K 2019/0481 (2013.01);
Abstract

A method for forming a high molecular weight liquid crystalline polymer is provided. The method include melt polymerizing two or more precursor monomers (e.g., acetylated or non-acetylated) in the presence of an aromatic amide oligomer. The present inventors have discovered that such an oligomer can lower the melt viscosity of the viscous polymer as it is formed. The ability to lower melt viscosity in situ during melt polymerization enables the formation of high molecular weight polymers that display low melt viscosity and can still be removed from the reactor vessel without solidifying therein. This not only improves the ease of processing, but also allows molecular weights to be reached that are even higher than conventionally practical.


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