The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jun. 09, 2014
Applicant:
Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;
Inventor:
Yunfeng Liang, Singapore, SG;
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/22 (2006.01); H03K 17/0412 (2006.01); H03K 17/78 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/223 (2013.01); H03K 17/04123 (2013.01); H03K 17/78 (2013.01); H03K 2017/6875 (2013.01); H03K 2217/0081 (2013.01);
Abstract
A method, system, and apparatus for driving a Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) are provided. A boosting capacitor is used in combination with two drivers to efficiently provide a boosting current to the SiC JFET and then a holding current to the SiC JFET. The boosting capacitor, upon discharge, creates the boosting current and once discharged the holding current is provided by one of the first and second drivers.