The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Jun. 18, 2014
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Daniel A. Cohen, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01S 5/30 (2006.01); B82Y 20/00 (2011.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01S 5/02 (2006.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3013 (2013.01); H01L 21/02631 (2013.01); B82Y 20/00 (2013.01); H01S 5/0215 (2013.01); H01S 5/0217 (2013.01); H01S 5/2009 (2013.01); H01S 5/22 (2013.01); H01S 5/3211 (2013.01); H01S 5/3213 (2013.01); H01S 5/3214 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01); H01S 2304/12 (2013.01); H01L 33/32 (2013.01); H01S 5/2054 (2013.01);
Abstract
A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.