The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Sep. 21, 2012
Applicant:

The Trustees of Princeton University, Princeton, NJ (US);

Inventors:

Claire Gmachl, Princeton, NJ (US);

YenTing Chiu, Princeton, NJ (US);

Yamac Dikmelik, Baltimore, MD (US);

Jacob B. Khurgin, Baltimore, MD (US);

Assignees:

The Trustees of Princeton University, Princeton, NJ (US);

The Johns Hopkins University, Baltimore, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/223 (2006.01); H01S 5/20 (2006.01); H01S 5/34 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2231 (2013.01); H01S 5/2004 (2013.01); H01S 5/3402 (2013.01); H01S 5/3401 (2013.01); H01S 5/32316 (2013.01);
Abstract

A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level.


Find Patent Forward Citations

Loading…