The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Mar. 13, 2014
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Satoru Ito, Hyogo, JP;

Yoshio Kawashima, Osaka, JP;

Yukio Hayakawa, Kyoto, JP;

Takumi Mikawa, Shiga, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/16 (2013.01); H01L 45/04 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01); H01L 27/222 (2013.01);
Abstract

A nonvolatile memory device includes a plurality of nonvolatile memory elements each having an upper electrode, a variable resistance layer, and a lower electrode; a first insulating layer embedding the plurality of nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements; a second insulating layer being formed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes included in the nonvolatile memory elements.


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