The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

Dec. 22, 2010
Applicants:

Peter S. Andrews, Durham, NC (US);

Ronan P. Le Toquin, Ventura, CA (US);

James Ibbetson, Santa Barbara, CA (US);

Inventors:

Peter S. Andrews, Durham, NC (US);

Ronan P. Le Toquin, Ventura, CA (US);

James Ibbetson, Santa Barbara, CA (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/508 (2013.01); H01L 33/20 (2013.01); H01L 33/504 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.


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