The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Dec. 02, 2014
National Chung-hsing University, Taichung, TW;
National Chung-Hsing University, Taichung, TW;
Abstract
A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from AlInGaN, wherein 0<y<1, 0≦z<1, and 0<(y+z)≦1. The tunneling layer is stacked on the second conductive type film and is made from AlInN, wherein 0<x<1 and x>y. The tunneling layer has a band gap greater than that of the second conductive film. The current spreading layer is stacked on the tunneling layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile